Study on anisotropies and momentum densities in AlN, GaN and InN by positron annihilation

Authors

  • N. Amrane Department of physics, U.A.E. University, Al-Ain, P.O. Box: 15551
  • M. Benkraouda Department of physics, U.A.E. University, Al-Ain, P.O. Box: 1555
  • N. Qamhieh Department of physics, U.A.E. University, Al-Ain, P.O. Box: 15551
  • Saleh T. Mahmoud Department of physics, U.A.E. University, Al-Ain, P.O. Box: 15551

DOI:

https://doi.org/10.24297/jap.v12i3.6161

Abstract

The independent particle model (IPM) coupled with empirical pseudopotential method (EPM) was used to compute the thermalized positron charge densities in specific family of binary tetrahedrally coordinated crystals of formula ANB8-N. Initial results show a clear asymmetrical positron charge distribution relative to the bond center. It is observed that the positron density is maximum in the open interstices and is excluded not only, from the ion cores but also to a considerable degree from the valence bonds. Electron-positron momentum densities are calculated for the (001,110) planes. The results are used to analyze the positron effects in AlN, GaN and InN compounds. Our computational technique provides the theoretical means of interpreting the k-space densities obtained experimentally using the twodimensional angular correlation of annihilation radiation (2D-ACAR).

Downloads

Download data is not yet available.

References

[1] (Vacancy defects) L. Šedivý, J. Čížek, E. Belas, R. Grill & O. Melikhova, Scientific Reports 6, Article number: 20641
(2016)
[2] S Ishibashi and A Uedono 2016 J. Phys.: Conf. Ser. 674 012020
[3] Xiaoguang Ma, , Yinghao Zhu, Yang Liu, Physics Letters A, Vol. 380, Issue 21, (2016), 1848–1855
[4] Yoyo Hinuma et al, Nature Communications 7, Article number: 11962 (2016)
[5] Zeng-Hua Cai, Prineha Narang, Harry A. Atwater, Shiyou Chen, Chun-Gang Duan, Zi-Qiang Zhu, and Jun-Hao Chu,
Chem. Mater., 2015, 27 (22), pp 7757–7764
[6] Andriy Zakutayeva, J. Mater. Chem. A, 2016,4 Solid-State Electronics, 6742-6754
[7] Herbert Paul Maruska, Walden Clark Rhines, Vol. 111, (2015), 32–41.
[8] Y. Suna, J.Y. Li, Y. Tana, L. Zhanga, Journal of Alloys and Compounds 471 (2009) 400–403
[9] Steven P. DenBaars et al, Acta Materialia 61 (2013) 945–951
[10] Keun-Man Song and Jinsub Park, Semicond. Sci. Technol. (2013) 28 015010
[11] Wenbin Lv, Lai Wang, Jiaxing Wang, Yuchen Xing, Jiyuan Zheng, Di Yang, Zhibiao Hao and Yi Luo, Japanese
Journal of Applied Physics, Vol. 52, Number 8S (2013)
[12] Herbert Paul Maruska, Walden Clark Rhines, Solid-State Electronics, Vol. 111, 2015, 32–41
[13] S Berrah et al 2007 Phys. Scr. 75 414
[14] S. Berrah et al, Turk J Phys 30 (2006), 513 – 518.
[15] Nan Li,a, Satyesh K. Yadav, Jian Wang,b, Xiang-Yang Liu, and Amit Misra, Sci Rep. 2015; 5: 18554.
[16] N. Amrane and Z. Mahdjoub, CHINESE JOURNAL OF PHYSICS VOL. 47, NO. 5 (2009)
[17] M. Alatalo, B. Barbiellini, M. Hakala, H. Kauppinen, T. Korhonen, M. J. Puska, K. Saarinen, Phys. Rev. B 54, 2397 –1996
[18] P. Hautojarvi, and R. M. Nieminen, PHYSICAL REVIEW B VOLUME 54, NUMBER 4 15 JULY 1996
[19] H.Nara and T.KOBAYASHI , J.Phys.Soc.Japan 41 (1976) 1429
[20] Y. C. Yeo, T. C. Chong and M. F. Li, J. Appl. Phys. 83, 1429 (1998)
[21] D.G.Lock, V.H.C.Crisp and R.N.West, J.Phys., F3 (1973) 561.
[22] Salvador Gonzalez, Dragica Vasileska, Alexander A. Demkov, Journal of Computational Electronics, 2002, Vol. 1, Issue 1, pp 179–183
[23] K.Fujiwara, T,Hyodo, J.Phys.Soc. Jpn,35 (1973) 1133.
[24] S. Berko, M. Haghgooie, and J. J. Mader, Phys. Lett. A 63A, 335, 1977

Downloads

Published

2016-09-20

How to Cite

Amrane, N., Benkraouda, M., Qamhieh, N., & T. Mahmoud, S. (2016). Study on anisotropies and momentum densities in AlN, GaN and InN by positron annihilation. JOURNAL OF ADVANCES IN PHYSICS, 12(3), 4356–4367. https://doi.org/10.24297/jap.v12i3.6161

Issue

Vol. 12 No. 3

Section

Articles

License

Creative Commons License All articles published in Journal of Advances in Linguistics are licensed under a Creative Commons Attribution 4.0 International License.