Carbon nanotube: An indirect ~ 0 eV band gap material

Authors

  • Maheshwar Sharon Walchand Center for Research for Nanotechnology & Bionanotechnology , Walchand College of Arts and Science, Solapur, Maharashtra, India
  • S. S. Kawale Walchand Center for Research for Nanotechnology & Bionanotechnology , Walchand College of Arts and Science, Solapur, Maharashtra, India
  • Rakesh Afre Walchand Center for Research for Nanotechnology & Bionanotechnology , Walchand College of Arts and Science, Solapur, Maharashtra, India
  • Madhuri Sharon Walchand Center for Research for Nanotechnology & Bionanotechnology , Walchand College of Arts and Science, Solapur, Maharashtra, India
  • C. H. Bhosale Shivaji University, Kolhapur, Maharashtra, India.

DOI:

https://doi.org/10.24297/jap.v11i5.321

Keywords:

optical properties, thin films, vapor deposition, Raman spectroscopy, X-ray diffractions

Abstract

Thin film of carbon was synthesized from camphor (C10H16O) by CVD technique in hydrogen atmosphere. For the first time it is confirmed the presence of almost zero indirect band gap in addition to its direct band gap.. Carrier concentration with intrinsic carbon is found to be around 1021 n/cm3. It is suggested that unless the zero indirect band gap is increased carbon thin film cannot be used for making a p:n junction. XRD, Raman and SEM analysis are performed.

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Author Biography

C. H. Bhosale, Shivaji University, Kolhapur, Maharashtra, India.

Department of Physics

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Published

2016-04-30

How to Cite

Sharon, M., Kawale, S. S., Afre, R., Sharon, M., & Bhosale, C. H. (2016). Carbon nanotube: An indirect ~ 0 eV band gap material. JOURNAL OF ADVANCES IN PHYSICS, 11(7), 3546–3550. https://doi.org/10.24297/jap.v11i5.321

Issue

Vol. 11 No. 7 (2016)

Section

Articles

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