Deformation potentials for Δ1 minimum of conduction band of single crystals n-Ge

Abstract

Deformation potentials eV and eV  for ∆₁ minimum of conduction band of single crystals  n-Ge are defined on the basis of theory of the anisotropic scattering and experimental data of longitudinal piezo resistance for single crystals n-Ge for the case, when P||J||[100]. Pressure coefficients for ∆ ₁ minimum under uniaxial pressure along crystallographic directions [100], [110] [111] and hydrostatic pressure have been calculated taking into account the given parameters. The results show that the inversion of (L₁-∆₁) type of absolute minimum in single crystals n-Ge can be implemented under hydrostatic and uniaxial pressures P||J||[100] Ñ– P||J||[110].