Effect of Temperature on Cu-doped p-ZnTe Thin-Films

Authors

  • G. Lastra PCeIM, Centro de Nanociencias y Nanotecnología-UNAM, CP. 22860, Ensenada, B.C. México.
  • A. Olivas Centro de Nanociencias y Nanotecnología-UNAM, CP. 22860, Ensenada, B.C. México.
  • J.I. Mejía University of Texas at Dallas, Richardson, Texas, 75080.
  • M.A. Quevedo-López University of Texas at Dallas, Richardson, Texas, 75080.

DOI:

https://doi.org/10.24297/jap.v10i1.1338

Keywords:

ZnTe, thin films, pulsed-laser deposition, Cu doping.

Abstract

In this paper we study the effect of temperature in 150 (±5) and 80 (±5) nm p-ZnTe thin- films immersed in 60 mgCu(NO3)2-3H2O/150 ml (H2O) for 1 minute, and heated at 200 and 300 °C for 30 minutes. Active layers were deposited by pulsed-laser deposition (PLD) at room temperature. Electrical parameters in un-doped films were around 108  ?109 ? and these values decreased to ~ 103 ? when the films were immersed in a Cu solution. The Cu-doped samples heated at 300 °C showed a completely homogeneous doping. X-ray diffraction (XRD) patterns showed the orthorhombic structure at 200 and 300 °C.

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Author Biographies

J.I. Mejía, University of Texas at Dallas, Richardson, Texas, 75080.

Department of Materials Science and Engineering

M.A. Quevedo-López, University of Texas at Dallas, Richardson, Texas, 75080.

Department of Materials Science and Engineering

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Published

2015-07-30

How to Cite

Lastra, G., Olivas, A., Mejía, J., & Quevedo-López, M. (2015). Effect of Temperature on Cu-doped p-ZnTe Thin-Films. JOURNAL OF ADVANCES IN PHYSICS, 10(1), 2560–2565. https://doi.org/10.24297/jap.v10i1.1338

Issue

Vol. 10 No. 1

Section

Articles

License

Creative Commons License All articles published in Journal of Advances in Linguistics are licensed under a Creative Commons Attribution 4.0 International License.