Influence of hydrocarbon environment on electrical characteristics of Ge-As-Se-S chalcogenide glass system

Authors

  • R. I. Alekberov The Ministry of Science and Education of the Republic of Azerbaijan, Institute of Physics named after Academician
  • S.I. Mekhtiyeva The Ministry of Science and Education of the Republic of Azerbaijan, Institute of Physics named after Academician
  • S. M. Mammadov The Ministry of Science and Education of the Republic of Azerbaijan, Institute of Physics named after Academician
  • H. İ. Mammadova The Ministry of Science and Education of the Republic of Azerbaijan, Institute of Physics named after Academician
  • B. G. Ibragimov The Ministry of Science and Education of the Republic of Azerbaijan, Institute of Physics named after Academician
  • M. V. Kazımov The Ministry of Science and Education of the Republic of Azerbaijan, Institute of Physics named after Academician
  • V. N. Poladova The Ministry of Science and Education of the Republic of Azerbaijan, Institute of Radiation Problems 9 B. Vahabzade str., Baku, Azerbaijan, AZ1143

DOI:

https://doi.org/10.24297/jap.v22i.9669

Keywords:

chalcogenide, glass, amorphous, non-crystalline

Abstract

The effect of propane-butane gas mixture on volt-Ampere characteristic (VAX) of thin–layer sandwich structure Al-Ge33As17S35Se15-Te obtained by thermal evaporation method in vacuum was investigated. It has been established that under the influence of gas atoms, the oscillations observed in VAX gradually decrease and disappear. This result is explained by the accumulation of neutral gas atoms into lower atomar pores. It has been shown that neutral gas atoms collected in pores lead to weakening of thermal-field ionization processes of U--centers, and to increase the speed of periodic deflection of charge carriers by these centers, which leads to an increase in the resistance of the sample.

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References

Lin, J., M. Heurich, M., Obermeier, E. Manufacture and examination of various spin-on glass films with respect to their humidity-sensitive properties// Sens. Actuators B (1993) 13(1-3), p.104-106.

Kornev, K.P., Korneva, I. P Humidity detectors based on chalcogenide semiconductors//Journal of Optoelectronics and Advanced Materials (2005) 7(5), p. 2359–2362.

Tsiulyanu, D. Chalcogenide based gas sensors/ D. Tsiulyanu, S. Marian, H - D. Liess, I. Eisele //Journal of Optoelectronics and Advanced Materials (2003) 5(5), p. 1349-1354

Adam, J.L., Zhang, X. Chalcogenide Glasses, Preparation, Properties and Applications/ J.L. Adam, X. Zhang, –Cambridge: Woodhead Publishing Limited (2014) p.703

Alekberov, R. İ., İsayev, A.I., Mekhtiyeva, S.İ. Features of the optical absorption, phonon spectrum and glass transition in As-Se, As-Se-S, As-Se-Te chalcogenide semiconductors// Journal of Optoelectronics and Advanced Materials (2020) 22(11), p.596-605.

Elliott, S. R. Extended range order, interstitial voids and the first sharp diffraction peak of network glasses//J. Non Crystalline Solids (1995) 182(1), p.40-48.

Elliott, S. R. Medium-range structural order in covalent amorphous solids // Nature (1991) 354, p.445-452.

Anderson, P. W. Model for the electronics structure of amorphous semiconductors // Phys. Rev. Lett. (1975) 37(15), p.953-955.

R.A. Street, N. F. Mott States in the gap in glassy semiconductors// Phys. Rev. Letters (1975) 35(19), p.1293-1296.

saev A.I., S.I. Mekhtiyeva, H.I. Mammadova, M.R.Rzayev, R.I.Alekberov Infulence of topological features and U- - centers on electric charge carrying at strong electric fields in GexAsyTe100-x-y amorphous films / Functional Materials (2023) №1, p.28-34.

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Published

2024-10-15

How to Cite

Alekberov, R. I. ., Mekhtiyeva, . S. ., Mammadov, S. M. ., Mammadova, H. İ. ., Ibragimov, B. G. ., Kazımov, M. V. ., & Poladova, V. N. . . (2024). Influence of hydrocarbon environment on electrical characteristics of Ge-As-Se-S chalcogenide glass system. JOURNAL OF ADVANCES IN PHYSICS, 22, 249–255. https://doi.org/10.24297/jap.v22i.9669

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