Extraction of temperature-dependent exciton-polariton damping in InP bulk crystal

Authors

  • S. A. Vaganov Ioffe Institute

DOI:

https://doi.org/10.24297/jap.v18i.8805

Keywords:

Indium phosphide, integrated absorption, exciton-polaritons

Abstract

The temperature dependence of exciton-polariton damping in InP bulk crystal was extracted by the method of integrated absorption. The extraction procedure excluding the contribution of inhomogeneous broadening into the exciton ground state absorption linewidth is graphically illustrated. The extracted temperature-dependent damping is analyzed regarding the primary dissipative mechanism in order to determine the material parameters of exciton-polariton scattering by acoustic and optical phonons.

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References

Adachi, S. (1992). Physical properties of III-V semiconductor compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP. Wiley. https://doi.org/10.1002/352760281X

Akhmediev, N. N. (1980). Role of spatial dispersion in light absorption by excitons. Sov. Phys. JETP, 52(4), 773-778.

Gao, J. (2015). Heterojunction bipolar transistors for circuit design: Microwave modeling and parameter extraction. Higher Education Press / Wiley. https://doi.org/10.1002/9781118921531

Gorban’, I. S., Krokhmal’, A. P., and Yanchuk, Z. Z. (2000). Excitons in monoclinic zinc diphosphide: Orthoexciton and polariton effects at n=1 resonance. Physics of the Solid State, 42(9), 1625–1633. https://doi.org/10.1134/1.1309441

Kasap, S., and Capper, P. (eds). (2017). Springer handbook of electronic and photonic materials (2nd edition). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-319-48933-9

Kosobukin, V. A., Seisyan, R. P., and Vaganov, S. A. (1993). Exciton-polariton light absorption in bulk GaAs and semiconductor superlattices. Semiconductor Science and Technology, 8(7), 1235–1238. https://doi.org/10.1088/0268-1242/8/7/009

Markosov, M. S., and Seisyan, R. P. (2009). Width of the excitonic absorption line in AlxGa1−xAs alloys. Semiconductors, 43(5), 629–634. https://doi.org/10.1134/S1063782609050170

Pekar, S. I. (1958). The theory of electromagnetic waves in a crystal in which excitons are produced. Sov. Phys. JETP, 6, 785–796.

Sanvitto, D., and Kéna-Cohen, S. (2016). The road towards polaritonic devices. Nature Materials, 15(10), 1061–1073. https://doi.org/10.1038/nmat4668

Seisyan, R. P., Kosobukin, V. A., Vaganov, S. A., Markosov, M. A., Shamirzaev, T. S., Zhuravlev, K. S., Bakarov, A. K., and Toropov, A. I. (2005). Excitonic polaritons in semiconductor solid solutions AlxGa1–xAs. Physica Status Solidi (c), 2(2), 900–905. https://doi.org/10.1002/pssc.200460338

Seisyan, R. P., and Vaganov, S. A. (2020). Temperature-Dependent Total Absorption of Exciton Polaritons in Bulk Semiconductors. Semiconductors, 54(4), 399–402. https://doi.org/10.1134/S1063782620040156

Vaganov, S. A., and Seisyan, R. P. (2011). Temperature-dependent excitonic absorption in long-period multiple InxGa1−xAs/GaAs quantum well structures. Semiconductors, 45(1), 103–109. https://doi.org/10.1134/S1063782611010222

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Published

2020-07-22

How to Cite

S. A. Vaganov. (2020). Extraction of temperature-dependent exciton-polariton damping in InP bulk crystal. JOURNAL OF ADVANCES IN PHYSICS, 18, 15-19. https://doi.org/10.24297/jap.v18i.8805

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