Band Gap Optimization of CdTeSe Thin-Film Solar Cells


  • Sean Meng Lynbrook High School, San Jose, California USA
  • Yanfa Yan Department of Physics, University of Toledo, Toledo, Ohio USA



CdTe, CdTeSe, Thin Film, Solar cell, Band gap structures, Band-gap grading


Device modeling and simulation studies of a CdTeSe thin film solar cell have been carried out. A variety of band-gap profiles, including ungraded, front graded, back graded, and double graded profiles of the CdTeSe absorber layer are examined and their performance characteristics have been analyzed. The calculation reveals that single junction cells with band-gap at the optimum value of 1.38 eV exhibit the maximum performance; alloys of CdTe and CdSe with a ratio of 1:1 forming CdTe0.5Se0.5 achieve the band-gap of 1.38 eV due to the bowing effect. The benefits of the band-gap grading are evaluated when the minimum band-gap is set at the optimum band-gap of 1.38 eV. It is shown that only few graded band-gap profiles exhibit an increase in efficiency, while most of graded profiles reduce performances.


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How to Cite

Meng, S., & Yan, Y. (2016). Band Gap Optimization of CdTeSe Thin-Film Solar Cells. JOURNAL OF ADVANCES IN PHYSICS, 12(2), 4213–4218.