Comparative study of different Sense Amplifiers in 0.18um technology

Authors

  • Sunil Kumar Thapar University, Patiala
  • Arun Kr. Chatterjee Thapar University, Patiala

DOI:

https://doi.org/10.24297/ijct.v7i3.3440

Keywords:

Sense amplifier, SRAM, CBL, Alpha latch

Abstract

A comparative study of different types of sense amplifiers [1] using 0.18um technology is presented. The sense amplifiers under considerations are used in SRAM and DRAM cells.The sensing delay of different types of sense amplifiers  are evaluated with respect to variation of bitline capacitance. Comparative results are also provided for the variation in delay with respect to power supply. Extensive results based on 0.18um CMOS technology using CADENCE Spectre simulation tools are presented for different architectures of sense amplifiers. From these results it has been proven that if the output of sense amplifier is isolated from the bitline parasitic capacitance then the sensing delay of sense amplifier reduces.

Downloads

Download data is not yet available.

Author Biographies

Sunil Kumar, Thapar University, Patiala

M.TECH. student

Arun Kr. Chatterjee, Thapar University, Patiala

Assistant Professor

Downloads

Published

2013-06-10

How to Cite

Kumar, S., & Chatterjee, A. K. (2013). Comparative study of different Sense Amplifiers in 0.18um technology. INTERNATIONAL JOURNAL OF COMPUTERS &Amp; TECHNOLOGY, 7(3), 615–619. https://doi.org/10.24297/ijct.v7i3.3440

Issue

Section

Research Articles

Most read articles by the same author(s)